? semiconductor components industries, llc, 2012 september, 2012 ? rev. 10 1 publication order number: mgsf1n03lt1/d mgsf1n03l, mvgsf1n03l power mosfet 30 v, 2.1 a, single n ? channel, sot ? 23 these miniature surface mount mosfets low r ds(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. typical applications are dc ? dc converters and power management in portable and battery ? powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life ? miniature sot ? 23 surface mount package saves board space ? aec ? q101 qualified and ppap capable ? mvgsf1n03lt1 ? these devices are pb ? free and are rohs compliant maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss 30 v gate ? to ? source voltage v gs 20 v continuous drain current r jl steady state t a = 25 c i d 2.1 a t a = 85 c 1.5 power dissipation r jl steady state t a = 25 c p d 0.69 w continuous drain current (note 1) steady state t a = 25 c i d 1.6 a t a = 85 c 1.2 power dissipation (note 1) t a = 25 c p d 0.42 w pulsed drain current t p =10 s i dm 6.0 a esd capability (note 3) c = 100 pf, rs = 1500 esd 125 v operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s 2.1 a lead temperature for soldering purposes (1/8? from case for 10 sec) t l 260 c thermal resistance ratings parameter symbol max unit junction ? to ? foot ? steady state r jl 180 c/w junction ? to ? ambient ? steady state (note 1) r ja 300 junction ? to ? ambient ? t < 10 s (note 1) r ja 250 junction ? to ? ambient ? steady state (note 2) r ja 400 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface ? mounted on fr4 board using 650 mm 2 , 1 oz. cu pad size. 2. surface ? mounted on fr4 board using 50 mm 2 , 1 oz. cu pad size. 3. esd rating information: hbm class 0. g d s device package shipping ? ordering information http://onsemi.com 30 v 125 m @ 4.5 v 80 m @ 10 v r ds(on) typ 2.1 a i d max v (br)dss sot ? 23 case 318 style 21 marking diagram/ pin assignment n3 = specific device code m = date code* = pb ? free package 3 1 drain 1 gate 2 source n ? channel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. mgsf1n03lt3g sot ? 23 (pb ? free) http://onsemi.com n3 m (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location. MGSF1N03LT1G sot ? 23 pb ? free 3000 / tape & reel 10000 / tape & reel mvgsf1n03lt1g sot ? 23 (pb ? free) 3000 / tape & reel
mgsf1n03l, mvgsf1n03l http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (v gs = 0 vdc, i d = 10 adc) v (br)dss 30 ? ? vdc zero gate voltage drain current (v ds = 30 vdc, v gs = 0 vdc) (v ds = 30 vdc, v gs = 0 vdc, t j = 125 c) i dss ? ? ? ? 1.0 10 adc gate ? body leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 4) gate threshold voltage (v ds = v gs , i d = 250 adc) v gs(th) 1.0 1.7 2.4 vdc static drain ? to ? source on ? resistance (v gs = 10 vdc, i d = 1.2 adc) (v gs = 4.5 vdc, i d = 1.0 adc) r ds(on) ? ? 0.08 0.125 0.10 0.145 dynamic characteristics input capacitance (v ds = 5.0 vdc) c iss ? 140 ? pf output capacitance (v ds = 5.0 vdc) c oss ? 100 ? transfer capacitance (v dg = 5.0 vdc) c rss ? 40 ? switching characteristics (note 5) turn ? on delay time (v dd = 15 vdc, i d = 1.0 adc, r l = 50 ) t d(on) ? 2.5 ? ns rise time t r ? 1.0 ? turn ? off delay time t d(off) ? 16 ? fall time t f ? 8.0 ? gate charge (see figure 6) q t ? 6000 ? pc source ? drain diode characteristics continuous current i s ? ? 0.6 a pulsed current i sm ? ? 0.75 forward voltage (note 5) v sd ? 0.8 ? v 4. pulse test: pulse width 300 s, duty cycle 2%. 5. switching characteristics are independent of operating junction temperature. typical electrical characteristics figure 1. transfer characteristics figure 2. on ? region characteristics 0 1.5 2 0.5 1 1 1.5 2 2.5 3 i d , drain current (amps) v gs , gate-to-source voltage (volts) v ds = 10 v t j = 150 c 25 c -55 c 3.5 2.5 024 10 0 1.5 2 v ds , drain-to-source voltage (volts) i d , drain current (amps) 6 0.5 8 1 2.5 3.25 v 2.75 v v gs = 3.75 v 2.5 v 3.0 v 3.5 v
mgsf1n03l, mvgsf1n03l http://onsemi.com 3 typical electrical characteristics figure 3. on ? resistance versus drain current figure 4. on ? resistance versus drain current figure 5. on ? resistance variation with temperature 0.001 0.1 1 figure 6. gate charge v sd , diode forward voltage (volts) figure 7. body diode forward voltage i d , diode current (amps) 0 0.1 0.2 0.3 0.9 0.01 0.4 figure 8. capacitance v ds , drain-to-source voltage (volts) c, capacitance (pf) 0 8 16 20 412 c iss c oss c rss 350 50 v gs = 0 v f = 1 mhz t j = 25 c 0 0.5 0.6 0.7 0.8 r ds(on) , drain-to-source resistance (ohms) 0 0.2 0.4 0.6 0.8 0.04 0.14 i d , drain current (amps) 25 c v gs = 4.5 v 0.09 0.1 0.3 0.5 0.7 150 c -55 c 0.9 1 0.24 0.19 r ds(on) , drain-to-source resistance (ohms) 0 0.4 0.8 1.2 1.6 0.04 0.1 0.12 i d , drain current (amps) v gs = 10 v 0.08 0.06 0.14 0.2 0.6 1 1.4 1.8 2 25 c 150 c -55 c r ds(on) , drain-to-source resistance (normalized) 0 0.8 t j , junction temperature ( c) v gs = 10 v i d = 2 a -55 0 50 100 150 0.2 0.4 0.6 1 1.2 1.4 1.6 v gs = 4.5 v i d = 1 a v gs , gate-to-source voltage (volts) 0 10 6 2 0 q t , total gate charge (pc) 8 4 1000 6000 v ds = 24 v t j = 25 c 2000 i d = 2.0 a 3000 5000 4000 t j = 150 c -55 c 25 c 0.16 1.8 -25 25 75 125 100 150 200 250 300
mgsf1n03l, mvgsf1n03l http://onsemi.com 4 typical electrical characteristics figure 9. maximum rated forward biased safe operating area v ds , drain ? to ? source voltage (v) 100 10 1 0.1 0.01 0.1 1 10 i d , drain current (a) 10 s 100 s 1 ms 10 ms dc 0 v < v gs < 10 v single pulse t j = 150 c, t c = 25 c r ds(on) limit thermal limit package limit 1000 0.1 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100 0 0.1 0.2 0.02 d = 0.5 0.05 0.01 single pulse transient thermal response ? r ja ( c/w) t, time (s) figure 10. thermal response 1 ms
mgsf1n03l, mvgsf1n03l http://onsemi.com 5 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 style 21: pin 1. gate 2. source 3. drain *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mgsf1n03lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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